2SC5706-E دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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2SC5706-E
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حجم فایل
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60.468
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi 2SC5706-E
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Transistor Type:
NPN
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Collector Current (Ic):
5A
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Power Dissipation (Pd):
800mW
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Package:
TO-251-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Bulk
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Part Status:
Active
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Current - Collector (Ic) (Max):
5A
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Voltage - Collector Emitter Breakdown (Max):
50V
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Vce Saturation (Max) @ Ib, Ic:
240mV @ 100mA, 2A
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Current - Collector Cutoff (Max):
1µA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
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Power - Max:
800mW
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Frequency - Transition:
400MHz
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
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Supplier Device Package:
TP
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Base Part Number:
2SC5706
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detail:
Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP
